Photosensitivity spectra of nanocomposite structures based on layered semiconductor InSe and ionic salt RbNO3.

Abstract

Intense research of 2D materials has led to the the creation of a new class of structures that have "ionotronic" characteristics. They consist of thin layers of semiconductors with 2D conductivity, metal oxides and materials with ionic conduction. The conductivity in the semiconductor layer of ionotronic structures depends on the motion of ions in electrolyte, which may be affected by applying a low d.c. voltage (several volts). The double electric layer formed by electrons and ions can be about of 0.5 nm thick. Solid-state ionotronic structures based on layered InSe crystals and ionic salt RbNO3 can be prepared by introducing this melted ionic salt into InSe van-der Waals gaps. The aim of the study. The study aims to explore the use of indium selenide as a base material for creating photosensitive structures of various types, including metal/semiconductor contacts, homojunctions and heterojunctions.