Photosensitive CuFeO2 / n-InSe heterojunctions

Abstract

Indium monoselenide InSe has a band gap Eg = 1.2 eV which is in the range of optimal values for photoelectric conversion of the solar spectrum in terrestrial conditions. The layered structure of InSe crystals with a weak Van der Waals bond between the layers provides them with an advantage over other semiconductors in the manufacture of substrates for heterostructures by avoiding ingot cutting operations, mechanical and chemical surface treatment. In addition, the resistance of InSe to radiation expands the scope of its use.